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absolute maximum ratings parameter units i d @ v gs = 4.5v, t c =25c continuous drain current 1.8 i d @ v gs = 4.5v, t c =100c continuous drain current 1.1 i dm pulsed drain current 7.2 p d @ t c = 25c max. power dissipation 1.4 w linear derating factor 0.01 w/c v gs gate-to-source voltage 10 v e as single pulse avalanche energy 97 mj i ar avalanche current 1.8 a e ar repetitive avalanche energy 0.14 mj dv/dt peak diode recovery dv/dt 11 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063in/1.6mm from case for 10s) weight 1.3 (typical) g o c a www.irf.com 1 technology product summary part number radiation level r ds(on) i d irhlg77110 100k rads (si) 0.22 ? 1.8a irhlg73110 300k rads (si) 0.22 ? 1.8a for footnotes refer to the last page pre-irradiation radiation hardened irhlg77110logic level power mosfet 100v, quad n-channel thru-hole (mo-036ab) features: 5v cmos and ttl compatible fast switching single event effect (see) hardened low total gate charge simple drive requirements ease of paralleling hermetically sealed light weight international rectifiers r7 tm logic level power mosfets provide simple solution to interfacingcmos and ttl control circuits to power devices in space and other radiation environments. the threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. this is achieved while maintaining single event gate rupture and single event burnout immunity. these devices are used in applications such as current boost low signal source in pwm, voltage comparator and operational amplifiers. mo-036ab 2n7612m1 pd-97178 preliminary downloaded from: http:///
irhlg77110, 2n7612m1 pre-irradiation 2 www.irf.com preliminary source-drain diode ratings and characteristics (per die) parameter min typ max units test conditions i s continuous source current (body diode) 1.8 i sm pulse source current (body diode) 7.2 v sd diode forward voltage 1.2 v t j = 25c, i s = 1.8a, v gs = 0v t rr reverse recovery time 100 ns t j = 25c, i f = 1.8a, di/dt 100a/ s q rr reverse recovery charge 223 nc v dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a for footnotes refer to the last page electrical characteristics for each n-channel device @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 100 v v gs = 0v, i d = 250 a ? bv dss / ? t j temperature coefficient of breakdown 0.11 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state 0.22 ? v gs = 4.5v, i d = 1.1a resistance v gs(th) gate threshold voltage 1.0 2.0 v v ds = v gs , i d = 250 a ? v gs(th) / ? t j gate threshold voltage coefficient -4.4 mv/c g fs forward transconductance 3.0 s v ds = 10v, i ds = 1.1a i dss zero gate voltage drain current 1.0 v ds = 80v ,v gs = 0v 1 0 v ds = 80v, v gs = 0v, t j =125c i gss gate-to-source leakage forward 100 v gs = 10v i gss gate-to-source leakage reverse -100 v gs = -10v q g total gate charge 15 v gs = 4.5v, i d = 1.8a q gs gate-to-source charge 2.5 nc v ds = 50v q gd gate-to-drain (miller) charge 6.0 t d (on) turn-on delay time 15 v dd = 50v, i d = 1.8a, t r rise time 20 v gs = 4.5v, r g = 7.5 ? t d (off) turn-off delay time 65 t f fall time 25 l s + l d total inductance 10 measured from drain lead (6mm /0.25in from pack.) to source lead (6mm/0.25in from pack.)with source wire internally bonded from source pin to drain pad c iss input capacitance 653 v gs = 0v, v ds = 25v c oss output capacitance 119 p f f = 1.0mhz c rss reverse transfer capacitance 2.7 na nh ns a thermal resistance (per die) parameter min typ max units test conditions r thja junction-to-ambient 90 c/w typical socket mount note: corresponding spice and saber models are available on international rectifier web site. r g gate resistance 16 ? f = 1.0mhz, open drain downloaded from: http:///
www.irf.com 3 pre-irradiation irhlg77110, 2n7612m1 preliminary international rectifier radiation hardened mosfets are tested to verify their radiation hardness capabil-ity. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-39 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. radiation characteristics international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page fig a. typical single event effect, safe operating area table 1. electrical characteristics @ tj = 25c, post total dose irradiation (per die) parameter up to 300k rads (si) 1 units test conditions min max bv dss drain-to-source breakdown voltage 100 v v gs = 0v, i d = 250a v gs(th) gate threshold voltage 1.0 2.0 v gs = v ds , i d = 250a i gss gate-to-source leakage forward 100 na v gs = 10v i gss gate-to-source leakage reverse -100 v gs = -10v i dss zero gate voltage drain current 10 a v ds = 80v, v gs =0v r ds(on) static drain-to-source on-state resistance (to-39) 0.25 ? v gs = 4.5v, i d = 1.1a r ds(on) static drain-to-source on-state v sd diode forward voltage 1.2 v v gs = 0v, i d = 1.8a resistance (mo-036ab) 0.22 ? v gs = 4.5v, i d = 1.1a 1. part numbers irhlg77110, irhlg73110 0 20 40 60 80 100 120 -8 -7 -6 -5 -4 -3 -2 -1 0 vgs vds br i au table 2. typical sin g le event effect safe operatin g area (per die) ion let energy range vds (v) (mev/(m g /cm 2 )) (mev) ( m) @vgs= @vgs= @vgs= @vgs= @vgs= @vgs= @vgs= @vgs= 0v -1v -2v -4v -5v -6v -7v -8v br 37 305 39 100 100 100 100 100 100 100 100 i 60 370 34 100 100 100 100 100 100 - - au 84 390 30 100 100 100 100 100 - - - downloaded from: http:///
irhlg77110, 2n7612m1 pre-irradiation 4 www.irf.com preliminary fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c vgs top 10v 5.0v 4.5v 3.0v 2.75v 2.5v 2.25v bottom 2.0v 2.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c 2.0v vgs top 10v 5.0v 4.5v 3.0v 2.75v 2.5v 2.25v bottom 2.0v 2 2.2 2.4 2.6 2.8 3 v gs , gate-to-source voltage (v) 0.1 1 10 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 50v 6 0 s pulse width t j = 150c t j = 25c -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) v gs = 4.5v i d = 1.8a downloaded from: http:///
www.irf.com 5 pre-irradiation irhlg77110, 2n7612m1 preliminary fig 8. typical threshold voltage vs temperature fig 7. typical drain-to-source breakdown voltage vs temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 0.0 0.5 1.0 1.5 2.0 2.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50a i d = 250a i d = 1.0ma i d = 150ma -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 100 110 120 130 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) i d = 1.0ma fig 5. typical on-resistance vs gate voltage fig 6. typical on-resistance vs drain current 0.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5 i d , drain current (a) 0.1 0.15 0.2 0.25 0.3 0.35 0.4 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) t j = 25c t j = 150c vgs = 4.5v 0 1 2 3 4 5 6 7 8 9 10 11 v gs, gate -to -source voltage (v) 0.1 0.2 0.3 0.4 0.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 1.8a t j = 25c t j = 150c downloaded from: http:///
irhlg77110, 2n7612m1 pre-irradiation 6 www.irf.com preliminary fig 11. typical source-to-drain diode forward voltage fig 12. maximum drain current vs. case temperature 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 0.01 0.1 1 10 i s d , r e v e r s e d r a i n c u r r e n t ( a ) v gs = 0v t j = 150c t j = 2 5 c 25 50 75 100 125 150 t c , case temperature (c) 0 0.5 1 1.5 2 i d , d r a i n c u r r e n t ( a ) fig 10. typical gate charge vs. gate-to-source voltage 1 10 100 v ds , drain-to-source voltage (v) 0 200 400 600 800 1000 1200 1400 1600 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss fig 9. typical capacitance vs. drain-to-source voltage 0 4 8 12 16 20 24 q g, total gate charge (nc) 0 2 4 6 8 10 12 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 80v v ds = 50v v ds = 20v i d = 1.8a for test circuit see figure 17 downloaded from: http:///
www.irf.com 7 pre-irradiation irhlg77110, 2n7612m1 preliminary fig 15. maximum effective transient thermal impedance, junction-to-ambient fig 13. maximum safe operating area fig 14. maximum avalanche energy vs. drain current 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 1e-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 1000 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 25 50 75 100 125 150 starting t j , junction temperature (c) 0 40 80 120 160 200 240 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 0.8a 1.1a bottom 1.8a p t t dm 1 2 downloaded from: http:///
irhlg77110, 2n7612m1 pre-irradiation 8 www.irf.com preliminary q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 17b. gate charge test circuit fig 17a. basic gate charge waveform v ds 90%10% v gs t d(on) t r t d(off) t f fig 16a. unclamped inductive test circuit fig 16b. unclamped inductive waveforms t p v (br)dss i as fig 18a. switching time test circuit fig 18b. switching time waveforms r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs
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0.1 % + - downloaded from: http:///
www.irf.com 9 pre-irradiation irhlg77110, 2n7612m1 preliminary pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 10 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 80 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 25v, starting t j = 25c, l= 6.6mh peak i l = 1.8a, v gs = 10v i sd 1.8a, di/dt 497a/ s, v dd 100v, t j 150c footnotes: case outline and dimensions mo-036ab ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 03/2011 downloaded from: http:///

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